accurately
A simple circuit to let you characterize JFETs more accurately
In April 2012, EDN published a circuit by John Fattaruso that lets you quickly measure the drain-source saturation current and the pinch-off voltage of both an N-JFET and a P-JFET. The pinch-off voltage (Vp) is measured by inserting a very large resistance between the source and the ground. The drain-source saturation current (IDSS) is measured…
A new computational model can predict antibody structures more accurately
By adapting artificial intelligence models known as large language models, researchers have made great progress in their ability to predict a protein’s structure from its sequence. However, this approach hasn’t been as successful for antibodies, in part because of the hypervariability seen in this type of protein. To overcome that limitation, MIT researchers have developed…